AP6N8R2ALH advanced power n-channel enhancement mode electronics corp. power mosfet 100% r g & uis test bv dss 60v simple drive requirement r ds(on) 8.2m fast switching characteristic i d 60a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 4 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.5 /w rthj-a 62.5 /w halogen-free product 45 parameter rating drain-source voltage 60 gate-source voltage + 20 drain current, v gs @ 10v 60 storage temperature range drain current, v gs @ 10v 38 pulsed drain current 1 160 total power dissipation 50 -55 to 150 total power dissipation 2 operating junction temperature range -55 to 150 201708241 thermal data parameter 1 maximum thermal resistance, junction-ambient (pcb mount) 3 g d s g d s to-252(h) a p6n8r2al series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 8.2 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =5v, i d =30a - 40 - s i dss drain-source leakage current v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =20v, v ds =0v - - 100 na q g total gate charge i d =30a - 44 70 nc q gs gate-source charge v ds =30v - 9 - nc q gd gate-drain ("miller") charge v gs =10v - 14 - nc t d(on) turn-on delay time v ds =30v - 12 - ns t r rise time i d =30a - 46 - ns t d(off) turn-off delay time r g =6 -38- ns t f fall time v gs =10v - 64 - ns c iss input capacitance v gs =0v - 2130 3408 pf c oss output capacitance v ds =30v - 1070 - pf c rss reverse transfer capacitance f=1.0mhz - 40 - pf r g gate resistance f=1.0mhz - 1.6 3.2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.3 v t rr reverse recovery time i s =30a, v gs =0 v , - 34 - ns q rr reverse recovery charge di/dt=100a/s - 24 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board 4.starting t j =25 o c , v dd =30v , l=0.1mh , r g =25 , v gs =10v this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP6N8R2ALH .
AP6N8R2ALH fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 200 240 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v g = 5.0v 0 40 80 120 160 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 8.0v 7.0v 6.0v v g = 5.0v t c = 150 o c 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v gs =10v 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) i d =250ua 4 8 12 16 20 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c .
AP6N8R2ALH fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. drain current v.s. case fig 12. gate charge waveform temperature 4 0 2 4 6 8 10 12 0 102030405060 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 30a v ds =30v q v g 10v q gs q gd q g charge 0 1000 2000 3000 4000 5000 1 21416181 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms dc operation in this area limited by r ds(on) 0 20 40 60 80 100 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) .
ap6n8r2al h fig 13. typ. drain-source on state fig 14. total power dissipation resistance fig 15. transfer characteristics 5 0 10 20 30 40 0 102030405060 i d , drain current (a) r ds(on) (m ) t j =25 o c v gs =10v 0 20 40 60 80 0 50 100 150 t c , case temperature( o c) p d , power dissipation(w) 0 20 40 60 80 100 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -55 o c .
marking information AP6N8R2ALH 6 part numbe r date code (ywwsss) y last digit of the year ww week sss sequence 6n8r2al ywwsss .
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